FSI International Awarded U.S. Patent on Method for Etching High-k Fil

    Business Editors/High-Tech Editors

    MINNEAPOLIS--(BUSINESS WIRE)--Feb. 15, 2005--FSI International, Inc. (Nasdaq:FSII), a manufacturer of capital equipment for the microelectronics industry, today announced that the U.S. Patent and Trademark Office has awarded the company a patent for a new process to etch high dielectric constant (high-k) films with high selectivity. The new process, which will be used at the 45-nm node and below, enables wet etching of high-k films - something not possible with traditional dielectric wet etch techniques.
    As IC manufacturers develop transistors for the 45-nm technology node, high-k materials such as hafnium silicates will replace silicon dioxide (SiO2) for the gate dielectric. An important step in building the transistor is removal of the gate dielectric from contact regions after gate patterning. However, removing high-k films using traditional techniques for SiO2 is difficult and largely ineffective. FSI's new, patented process provides IC manufacturers with the ability to quickly and selectively remove thin films of high-k materials using existing FSI platforms. The new etch process involves contacting high-k films with a dilute, fluoride-containing solution to achieve a desired selective etch of the high-k film. FSI has successfully demonstrated this process for selectively removing hafnium silicate at the company's development laboratory in Chaska, Minn.
    "We have received considerable interest in this patented technology from many leading, global IC manufacturers as they move to develop devices at the 45-nm node and beyond," said Dr. Jeffery W. Butterbaugh, FSI's chief technologist. "The development of this process and subsequent patent demonstrates FSI's commitment to helping its customers cost effectively overcome emerging technology challenges by extending the capabilities of existing FSI process equipment."
    The process can be implemented on both the FSI MAGELLAN(R) Immersion Clean System and the FSI ZETA(R) Spray Processing System. The new process chemistry provides hafnium silicate removal rates up to 80 angstroms per minute with selectivity to tetraethyl orthosilicate (TEOS) deposited oxide as high as 16:1.
    This patent adds to FSI's extensive IC surface preparation intellectual property portfolio. FSI currently has more than 90 active U.S. patents in place, with an additional 28 patents pending. More information on the company's patent portfolio and Intellectual Property and Licensing Program is available on the FSI Web site at http://www.fsi-intl.com/company/patents.php.

    FSI International Inc. is a global supplier of surface conditioning equipment technology and support services for microelectronics manufacturing. Using the Company's broad portfolio of cleaning products, which include batch and single-wafer platforms for immersion, spray, vapor and CryoKinetic technologies, customers are able to achieve their process performance, flexibility and productivity goals.

    The Company's support services programs provide product and process enhancements to extend the life of installed FSI equipment, enabling worldwide customers to realize a higher return on their capital investment.

    FSI maintains a Web site at http://www.fsi-intl.com.

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CONTACT: FSI International, Inc., Minneapolis Trade Media: Laurie Walker, 952-448-8066 or Financial Media and Investors: Benno Sand, 952-448-8936

KEYWORD: MINNESOTA INDUSTRY KEYWORD: HARDWARE CHEMICALS/PLASTICS MEDICAL PRODUCT SOURCE: FSI International, Inc.

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